for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com 9 9 - 1 amplifiers - l ine a r & p ower - sm t HMC637LP5 / 637lp5e v02.0709 general description features functional diagram typical applications gaas mesfet mmic 1 watt power amplifier, dc - 6 ghz the h m c637 lp 5( e ) is a gaas mmi c mesfe t distributed p ower amplifer which operates bet- ween dc and 6 ghz. the amplifer provides 13 db of gain, +40 dbm output ip 3 and +29 dbm of output power at 1 db gain compression while requiring 400 ma from a +12v supply. gain fatness is excellent at 0.75 db from dc - 6 ghz making the h m c637 lp 5( e ) ideal for ew , e c m , r adar and test equipment applications. the h m c637 lp 5( e ) amplifer i / o s are internally matched to 50 o hms and the 5x5 mm q fn package is compatible with high volume sm t assembly equipment. p 1db o utput p ower: +29 dbm gain: 13 db o utput ip 3: +40 dbm 50 o hm m atched i nput/ o utput 32 l ead 5x5mm l ead sm t p ackage: 25mm 2 the h m c637 lp 5( e ) wideband p a is ideal for: ? telecom i nfrastructure ? m icrowave r adio & v s at ? m ilitary & s pace ? test i nstrumentation ? f iber o ptics electrical specifcations, t a = +25 c, vdd= +12v, vgg2= +5v, idd= 400 ma* p arameter m in. typ. m ax. units f requency r ange dc - 6 ghz gain 12 13 db gain f latness 0.75 db gain variation o ver temperature 0.025 db/ c i nput r eturn l oss 12 db o utput r eturn l oss 15 db o utput p ower for 1 db compression ( p 1db) 27 29 dbm s aturated o utput p ower ( p sat) 29.5 dbm o utput third o rder i ntercept ( ip 3) 40 dbm n oise f igure 5 db s upply current ( i dd) 320 400 480 ma * adjust vgg1 between -2 to 0v to achieve idd= 400 ma typical.
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - sm t 9 9 - 2 output return loss vs. temperature gain & return loss gain vs. temperature reverse isolation vs. temperature input return loss vs. temperature noise figure vs. temperature HMC637LP5 / 637lp5e v02.0709 gaas mesfet mmic 1 watt power amplifier, dc - 6 ghz 2 4 6 8 10 12 0 2 4 6 8 +25c +85c -40c noise figure (db) frequency (ghz) -60 -50 -40 -30 -20 -10 0 0 2 4 6 8 +25c +85c -40c isolation (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 0 2 4 6 8 +25c +85c -40c return loss (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 0 2 4 6 8 +25c +85c -40c return loss (db) frequency (ghz) 0 2 4 6 8 10 12 14 16 18 0 2 4 6 8 +25c +85c -40c gain (db) frequency (ghz) -30 -20 -10 0 10 20 0 2 4 6 8 s21 s11 s22 response (db) frequency (ghz)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com 9 9 - 3 amplifiers - l ine a r & p ower - sm t p1db vs. temperature psat vs. temperature output ip3 vs. temperature gain, power & output ip3 vs. supply voltage @ 3 ghz, fixed vgg HMC637LP5 / 637lp5e v02.0709 gaas mesfet mmic 1 watt power amplifier, dc - 6 ghz 20 22 24 26 28 30 32 0 2 4 6 8 +25c +85c -40c psat (dbm) frequency (ghz) 20 22 24 26 28 30 32 0 2 4 6 8 +25c +85c -40c p1db (dbm) frequency (ghz) 10 15 20 25 30 35 40 45 11.5 12 12.5 gain p1db psat ip3 gain (db), p1db (dbm), psat (dbm), ip3 (dbm) vdd (v) 20 25 30 35 40 45 50 55 60 0 2 4 6 8 +25c +85c -40c ip3 (dbm) frequency (ghz) gain & return loss vs. frequency, log scale output ip3 vs. temperature, log scale -30 -20 -10 0 10 20 0.01 0.1 1 10 s21 s11 s22 response (db) frequency (ghz) 20 25 30 35 40 45 50 55 60 0.01 0.1 1 10 +25c +85c -40c ip3 (dbm) frequency (ghz)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - sm t 9 9 - 4 absolute maximum ratings drain bias voltage (vdd) +14 vdc gate bias voltage (vgg1) -3 to 0 vdc gate bias voltage (vgg2) +4 to +7 vdc rf i nput p ower ( rfin )(vdd = +12 vdc) +25 dbm channel temperature 150 c continuous p diss (t= 85 c) (derate 87 m w /c above 85 c) 5.7 w thermal r esistance (channel to ground paddle) 11.5 c/ w s torage temperature -65 to 150 c o perating temperature -40 to 85 c vdd (v) i dd (ma) 11.5 373 12.0 400 12.5 425 typical supply current vs. vdd ele ct ros tat i c sensi t i v e d e v i c e o b ser v e ha n d lin g pre caut ions HMC637LP5 / 637lp5e v02.0709 gaas mesfet mmic 1 watt power amplifier, dc - 6 ghz
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com 9 9 - 5 amplifiers - l ine a r & p ower - sm t no t es : 1. le ad fr a me m at eri a l : c opper a llo y 2. d imensions a re in in ch es [ millime t ers ] 3. le ad sp ac in g t oler a n c e is non -cu m u l at i v e 4. p ad bu rr len gth s ha ll b e 0.15mm m ax im u m . p ad bu rr h ei ght s ha ll b e 0.05mm m ax im u m . 5. p ackag e w a rp s ha ll not e xc ee d 0.05mm. 6. a ll g ro u n d le ad s a n d g ro u n d p add le m u s t b e sol d ere d to p cb rf g ro u n d. 7. refer to h i tt i t e a ppli cat ion not e for s ugg es t e d l a n d p att ern . p art n umber p ackage body m aterial l ead f inish msl r ating p ackage m arking [3] h m c637 lp 5 l ow s tress i njection m olded p lastic s n/ p b s older msl 1 [1] h637 xxxx h m c637 lp 5 e r oh s -compliant l ow s tress i njection m olded p lastic 100% matte s n msl 1 [2] h637 xxxx [1] m ax peak refow temperature of 235 c [2] m ax peak refow temperature of 260 c [3] 4-digit lot number xxxx package information outline drawing HMC637LP5 / 637lp5e v02.0709 gaas mesfet mmic 1 watt power amplifier, dc - 6 ghz
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - sm t 9 9 - 6 pin descriptions HMC637LP5 / 637lp5e v02.0709 gaas mesfet mmic 1 watt power amplifier, dc - 6 ghz pin number f unction description i nterface schematic 1, 3, 4, 6 - 12, 14, 17, 18, 19, 20, 22 - 28, 31, 32 n/c n o connection. these pins may be connected to rf ground. p erformance will not be affected. 2 vgg2 gate control 2 for amplifer. +5v should be applied to vgg2 for nominal operation. attach bypass capacitor per application circuit herein. 5 rfin this pad is dc coupled and matched to 50 o hms. 13 vgg1 gate control 1 for amplifer. attach bypass capacitor per application circuit herein. p lease follow mmic amplifer biasing p rocedure application n ote. 15 acg4 l ow frequency termination. attach bypass capacitor per application circuit herein. 16 acg3 21 rfo ut & vdd rf output for amplifer. connect the dc bias (vdd) network to provide drain current ( idd). s ee application circuit herein. 29 acg2 l ow frequency termination. attach bypass capacitor per application circuit herein. 30 acg1 ground p addle gnd ground paddle must be connected to rf /dc ground.
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com 9 9 - 7 amplifiers - l ine a r & p ower - sm t application circuit note 1: drain bias (vdd) must be applied through a broadband bias tee or external bias network. note 2: power up bias sequence a) set vgg1 to -2v b) set vdd to +12v c) set vgg2 to +5v d) adjust vgg1 to achieve idd for 400 ma power down sequence a) remove vgg2 bias b) remove vdd bias c) remove vgg1 bias HMC637LP5 / 637lp5e v02.0709 gaas mesfet mmic 1 watt power amplifier, dc - 6 ghz
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - sm t 9 9 - 8 evaluation pcb the circuit board used in the application should use rf circuit design techniques. s ignal lines should have 50 o hm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appropriate heat sink. the evaluation circuit board shown is available from hittite upon request. list of materials for evaluation pcb 108347 [1] HMC637LP5 / 637lp5e v02.0709 gaas mesfet mmic 1 watt power amplifier, dc - 6 ghz i tem description j1 - j2 sri sm a connector j3 - j4 2mm m olex header c1, c2 100 p f capacitor, 0402 p kg. c3 - c6 1000 p f capacitor, 0603 p kg. c7 - c9 4.7 f capacitor, tantalum u1 h m c637 lp 5 / h m c637 lp 5 e p cb [2] 109765 e valuation p cb [1] r eference this number when ordering complete evaluation p cb [2] circuit board m aterial: r ogers 4350
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